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EEEN20070

Academic Year 2026/2027

Solid State Devices (EEEN20070)

Subject:
Electronic & Electrical Eng
College:
Engineering & Architecture
School:
Electrical & Electronic Eng
Level:
2 (Intermediate)
Credits:
5
Module Coordinator:
Dr Xu Wang
Trimester:
Autumn
Mode of Delivery:
On Campus
Internship Module:
No
How will I be graded?
Letter grades

Curricular information is subject to change.

This course aims to provide an introduction to the electrical properties of materials, in particular crystalline semiconductors, and then to use this foundation to develop a basic understanding of the physical operating principles of the common electronic devices.

The topics covered include:
- Introduction to Quantum Mechanics and Energy Band Theory
- Definitions of metal, insulator and semiconductor based on existence of energy bands in crystalline material
- Classification of semiconductor materials
- Charge transport in metals and pure and doped semiconductors
- Continuity and Poisson equations
- Principles of semiconductor processing; Moore's Law
- Ideal PN junction: electrostatic behaviour of depletion layer; physical explanation and derivation of static current-voltage characteristic
- The Metal-Semiconductor Field-Effect Transistor (MOSFET); MOS capacitor; DC characteristic; applications
- The Bipolar Junction Transistor (BJT): structure of NPN and PNP bipolars; operating principles; characteristics; applications

About this Module

Learning Outcomes:

Please note that the codes given at the end of each Learning Outcome relate to the Programme Outcomes specified by Engineers Ireland for the professional accreditation of degree programmes.

On successfully completing this module a student will be able to:Describe at a basic level the physical processes underlying electrical transport and conduction (or non-conduction) in a wide range of solid materials, including metals, semiconductors and insulators (PO(A) 4); Analyse the basic operation in static and small-signal conditions of a range of commonly-encountered electronic components and devices, in particular the PN junction and transistor devices both FET and bipolar in kind, including formulating appropriate assumptions and developing compact circuit-level static models of such devices. (PO(A) 4, PO(B) 4). Describe the basic processes used in the semiconductor industry for the manufacture of complex semiconductor components, in particular Integrated Circuits (ICs) including gaining an appreciation of the wider business context, quality control, depreciation cycles, capital investment etc.Describe the impact of the exponential evolution of IC technology (Moore's Law) on current and future product development in Electronic and Electrical Engineering. (PO(D) 2 and PO(F) 4). Choose and apply an appropriate device model for use in commercial computer-aided design software tools, appreciate some of the limitations of such models and design and execute basic experiments for model parameter extraction (PO(B) 4 PO(C) 3)

Indicative Module Content:

- Introduction to Quantum Mechanics and Energy Band Theory
- Definitions of metal, insulator and semiconductor based on existence of energy bands in crystalline material
- Classification of semiconductor materials
- Charge transport in metals and pure and doped semiconductors
- Continuity and Poisson equations
- Principles of semiconductor processing; Moore's Law
- Ideal PN junction: electrostatic behaviour of depletion layer; physical explanation and derivation of static current-voltage characteristic
- The Metal-Semiconductor Field-Effect Transistor (MOSFET); MOS capacitor; DC characteristic; applications
- The Bipolar Junction Transistor (BJT): structure of NPN and PNP bipolars; operating principles; characteristics; applications

The United Nations identified seventeen Sustainable Development Goals (SDGs) as core to the 2030 Agenda for Sustainable Development, and UCD contributes in general to SDG 4 Quality Education. Further SDGs explored within this module if relevant are listed below. A scale of 1 - 5 indicates the extent to which the SDG is covered.


 

Student Effort Hours:
Student Effort Type Hours
Lectures

22

Tutorial

2

Laboratories

4

Specified Learning Activities

20

Autonomous Student Learning

60

Total

108


Approaches to Teaching and Learning:
Lectures, tutorials, lab assignments, mid-term exam, and final exam

Requirements, Exclusions and Recommendations
Learning Recommendations:

Level 1 Physics and Mathematics for Engineers or equivalent. Knowledge of Integral and differential calculus, complex arithmetic.


Module Requisites and Incompatibles
Equivalents:
Solid-State Electronics I (ECEN20040)


 

Assessment Strategy
Description Timing Component Scale Must Pass Component % of Final Grade In Module Component Repeat Offered
Exam (In-person): Closed-Book Final Exam End of trimester
Duration:
2 hr(s)
Standard conversion grade scale 40% No
60
No
Exam (In-person): Closed-Book Mid-term Exam Week 7, Week 8, Week 9 Standard conversion grade scale 40% No
20
No
Group Work Assignment: Lab Assignment 1 Report Week 9 Standard conversion grade scale 40% No
10
No
Group Work Assignment: Lab 2 Assignment Report Week 11 Standard conversion grade scale 40% No
10
No

Carry forward of passed components
No
 

Resit In Terminal Exam
Spring Yes - 2 Hour
Please see Student Jargon Buster for more information about remediation types and timing. 

Feedback Strategy/Strategies

• Feedback individually to students, post-assessment
• Group/class feedback, post-assessment

How will my Feedback be Delivered?

Not yet recorded.

Timetabling information is displayed only for guidance purposes, relates to the current Academic Year only and is subject to change.
Autumn Lecture Offering 1 Week(s) - 1, 2, 3, 4, 5, 6, 7, 9, 10, 11, 12 Mon 13:00 - 13:50
Autumn Lecture Offering 1 Week(s) - Autumn: All Weeks Wed 10:00 - 10:50
Autumn Laboratory Offering 1 Week(s) - 9, 11 Wed 14:00 - 15:50
Autumn Laboratory Offering 1 Week(s) - 8, 10 Wed 14:00 - 15:50